Electronic transport in InGaAs/Al2O3 nFinFETs
نویسندگان
چکیده
Based on the multiple subbands quasi-ballistic transport theory, we investigate the electronic transport of nano size In0.53Ga0.47As nFinFETs with Al2O3 gate dielectric, emphasizing the saturation current region. 1D mobile charge density and gate capacitance density are introduced for the first time to describe the nano-FinFET transport property under volume inversion. With the extracted effective channel mobility of electrons in the linear region from our experiments, the electron mean free path λ in the channel with the value of 5–9 nm is obtained. With only one fitting parameter α = 0.31 for the critical length = α ( ) l L kT q Vd in the quasi-ballistic transport theory, the calculated drain current can fit all experimental data for various gate voltage Vg, source–drain voltage Vd, and temperature (240–332 K) in overall very good agreement. The backscattering coefficient r in the saturation region is larger than 0.8, indicating a large room for improvement for the present InGaAs FinFET technology and performance.
منابع مشابه
Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs
A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0 .53Ga0 .47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility μn is around 370 cm2 /V·s at low Vg−Vth bias at room temperature and decreases with increasing Vg , and increases with i...
متن کاملSchottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3
The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height SBH at the metal/semiconductor interface. ...
متن کاملCapacitance-voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal –Oxide-Semiconductor Structures
ALD Al2O3/GaAs and Al2O3/In0.2Ga0.8As MOS and source-drain implanted MOSFET structure were fabricated and characterized by capacitance-voltage (CV) and current-voltage (I-V) measurements. It is shown that, after high-temperature anneal, the MOS leakage current density of the thinner (16nm) film is much higher than that of the thicker (30nm) film. The highquality Al2O3 (30nm)/In0.2Ga0.8As interf...
متن کاملSurface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3
Related Articles Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface J. Appl. Phys. 111, 093713 (2012) Magnetic properties of ZnO nanoclusters J. Appl. Phys. 111, 084321 (2012) Self-passivation of transparent single-walled carbon nanotube films on plastic substrates by microwave-induced rapid nanowelding Appl. Phys. Lett. 100, 163120 (2012) N...
متن کامل